Development of Aluminium Nitride (AlN) Based Materials for RF-Window and Microwave Applications

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dc.contributor.authorRadhika, Ethireddy
dc.date.accessioned2025-05-06T11:33:42Z
dc.date.available2025-05-06T11:33:42Z
dc.date.issued2024
dc.descriptionSupervisor: Dobbidi, Pamu
dc.description.abstractThe development of 5G technologies, targeted at increasing data rate on a wireless communication network by a factor of 100, will impose on the radio frequency (RF) electronics some specifications such as large band width, high gain, temperature-independent performance, and small size. In millimeter-wave applications, especially dielectric resonator antennas (DRAs) are promising candidates to replace traditional radiating elements at high frequencies. This replacement is because the DRAs do not suffer conduction losses and are characterized by high radiation efficiency when appropriately excited.
dc.identifier.otherROLL NO.186153104
dc.identifier.urihttps://gyan.iitg.ac.in/handle/123456789/2886
dc.language.isoen
dc.relation.ispartofseriesTH-3335
dc.titleDevelopment of Aluminium Nitride (AlN) Based Materials for RF-Window and Microwave Applications
dc.typeThesis
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