Design, Optimization, and Modelling of Hybrid Organic-Inorganic Perovskite Memristors

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dc.contributor.authorGogoi, Himangshu Jyoti
dc.date.accessioned2023-06-03T09:22:45Z
dc.date.accessioned2023-10-20T07:27:31Z
dc.date.available2023-06-03T09:22:45Z
dc.date.available2023-10-20T07:27:31Z
dc.date.issued2023
dc.descriptionSupervisor: Mallajosyula, Arun Tejen_US
dc.description.abstractMemristor (memory + resistor) is the fourth basic circuit element beyond resistor, capacitor and inductor. It establishes a relationship between flux and charge and its present resistance depends on its past state. With fast switching speeds (~picoseconds), low power consumption (~femto-joule/bit), long write/erase endurance, and high scalability (nano-meter scale), memristors have strongly captured the attention of research community in the fields of neuromorphic computation, artificial intelligence, ultra-dense data storage, and logic circuits.en_US
dc.identifier.otherROLL NO.166102004
dc.identifier.urihttps://gyan.iitg.ac.in/handle/123456789/2385
dc.language.isoenen_US
dc.relation.ispartofseriesTH-3069;
dc.subjectMemristoren_US
dc.subjectResistive Switchingen_US
dc.subjectHybrid Perovskiteen_US
dc.subjectSPICE Modellingen_US
dc.titleDesign, Optimization, and Modelling of Hybrid Organic-Inorganic Perovskite Memristorsen_US
dc.typeThesisen_US
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