Fabrication of Copc and PTCDI-Ph Based low -operating voltage organic field-effect Transistors

dc.contributor.authorGedda, Murali
dc.date.accessioned2015-09-23T07:01:57Z
dc.date.accessioned2023-10-26T09:57:15Z
dc.date.available2015-09-23T07:01:57Z
dc.date.available2023-10-26T09:57:15Z
dc.date.issued2015
dc.descriptionSupervisor: Dipak Kumar Goswamien_US
dc.description.abstractOrganic field-effect transistors (OFETs) based on organic semiconductors have attracted much interest as possible inexpensive and flexible alternatives to inorganic devices [1-3]. Despite considerable improvement in device properties, a better understanding of the growth of the active channel and the control over the growth can significantly enhance the charge transport through the device and reduce the operating voltage.en_US
dc.identifier.otherROLL NO.10612101
dc.identifier.urihttps://gyan.iitg.ac.in/handle/123456789/533
dc.language.isoenen_US
dc.relation.ispartofseriesTH-1322;
dc.subjectPHYSICSen_US
dc.titleFabrication of Copc and PTCDI-Ph Based low -operating voltage organic field-effect Transistorsen_US
dc.typeThesisen_US
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