Design and Analysis of Memelements for Low Power and Area Efficient High Frequency Applications
| dc.contributor.author | Ananda, Y R | |
| dc.date.accessioned | 2024-04-02T10:10:01Z | |
| dc.date.available | 2024-04-02T10:10:01Z | |
| dc.date.issued | 2023 | |
| dc.description | Supervisor: Trivedi, Gaurav | |
| dc.description.abstract | Memristor, memcapacitor, and meminductor are the three types of memory elements (memelements). Memristor is the fourth fundamental circuit element based on the missing relationship between two electrical quantities, the charge (q) and the flux (φ). The memristor is considered one of the most promising nano-devices among those currently being studied for possible use in future electronic systems. The best performance features include fast switching speed, high endurance and data retention, low power consumption, high integration density, and CMOS compatibility. Memristors are being explored as a potential technology to replace CMOS for logic-in-memory systems exploiting memristive nonvolatility. It is one of the prominent characteristic features of the memristor, which effectively solves the so-called memory wall problem in conventional von-Neumann architecture. A memristive device is highly nonlinear and non-volatile, which makes this device is better storage element with greater data density than the existing memory devices. In addition, the memristor exhibits switching capability, which is more relevant for implementing logic gates, a realization of Boolean functions, and system designing, such as arithmetic units like adders, subtractors, multipliers and dividers. | |
| dc.identifier.other | ROLL NO.186102001 | |
| dc.identifier.uri | https://gyan.iitg.ac.in/handle/123456789/2592 | |
| dc.language.iso | en | |
| dc.relation.ispartofseries | TH-3210 | |
| dc.title | Design and Analysis of Memelements for Low Power and Area Efficient High Frequency Applications | |
| dc.type | Thesis |
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