Barkachary, Borad M2020-11-182023-10-262020-11-182023-10-262019ROLL NO.10610325https://gyan.iitg.ac.in/handle/123456789/1752Supervisor: Shrikrishna N. JoshiSilicon and silicon carbide materials are widely used materials in semiconductor industries, defence, aerospace and biomedical due to their excellent mechanical, chemical and thermal properties. However, mechanical processing of these materials is very much difficult because of their brittleness. Single point diamond turning (SPDT) successfully produces optical finish surfaces on these materials; however, it causes severe tool wear to the diamond tool. SPDT comprises of complex interaction of its process factors. Analytical modeling of these parameters is difficult. Numerical simulations are therefore becoming imperative to study the nanometric cutting processes. At present, molecular dynamic (MD) simulation is regarded as the high-end numerical simulator. However, MD simulation considers a very limited work-domain, i.e., a nano-portion of the cutting process. Moreover, it requires substantial computing time. An alternate way to this problem is to employ finite element method (FEM). FEM is capable of obtaining insight into the effects of the cutting process that are sometimes not possible to visualize through experiments.After an extensive literature review on various aspects of SPDT process such as analytical, experimental and numerical studies on various process parameters, tool geometry, and material aspects, it was found that scant literature is available on numerical simulation of silicon and silicon carbide.enMECHANICAL ENGINEERINGMECHANICAL ENGINEERINGThesis